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          Technology for RF and mm-wave applications:

          The United Monolithic Semiconductors foundry offers to designers reliable high performance GaAs & GaN processes. Our technologies are proved by the successful implementation of many standard products for Defence, Aerospace, Telecom, Automotive and ISM.

          Our pHEMT, HBT, Schottky diode and passive technologies, based on a high throughput 4-inch manufacturing line, are available in open foundry mode to offer our customers the capability to realise low noise or power MMIC solutions based on their own designs.

          Technologies suitable for Space Flight Models

          Most of our GaAs and GaN technologies, available in foundry mode, are space evaluated and listed within the European Preferred Part List (EPPL).

          Open processes:

          Key parameters and characteristics for UMS open technologies are summarised below

          Process datasheets



          GaN HEMT

          GH25_10

          GaAs pHEMT     Low noise

          PH10

          PH15

          PH25

          GaAs pHEMT     Power

          PPH15X_20

          PPH25

          PPH25X

          GaAs HBT             

          HB20M

          GaAs MESFET

          HP07

          GaAs Schottky

          BES

          GaAs passive

          ULRC_20

          Do you need more information?

          Contact us @ tmtnanjing@163.com

          地址:中國南京市玄武區龍蟠路155號紫金聯合立方5幢    郵編:210037

          電話:+86-25-84812008 ; 傳真:+86-25-84812098 ; 電郵:tmtnanjing@163.com

          蘇ICP備14010667號

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